Fluoroaromatic Resists for 157-nm Lithography.

Single Layer Fluoropolymer Resists for 157 nm Lithography

We have developed a family of 157 nm resists that utilize fluorinated terpolymer resins composed of 1) tetrafluoroethylene (TFE), 2) a norbornene fluoroalcohol (NBFOH), and 3) t-butyl acrylate (t-BA). TFE incorporation reduces optical absorbance at 157 nm, while the presence of a norbornene functionalized with hexafluoroisopropanol groups contributes to aqueous base (developer) solubility and e...

Bottom Anti-Reflective Coatings (BARCs) for 157-nm!Lithography

Bottom anti-reflective coatings (BARCs) are essential for achieving the 65-nm node resolution target by minimizing the substrate reflectivity to less than 1% and by planarizing substrates. We believe that the developments in 157-nm BARC products are on track to make them available for timely application in 157-nm lithography. We have made some significant improvements in resist compatibility an...

Design of very transparent fluoropolymer resists for semiconductor manufacture at 157 nm

Photolithography at 157 nm requires development of new photoresists that are highly transparent at this wavelength. Transparent fluoropolymer platforms have been identified which also possess other materials properties required for chemically amplified imaging and aqueous development. Polymers of tetrafluoroethylene (TFE), a fluoroalcohol-substituted norbornene and an acid-labile acrylate ester...

Materials for Advanced Microlithography: Polymers for 157 Nm Lithography and Acid Diffusion Measurements

Chemical Amplification Resists for Future Lithography

The technologies for future lithography have been proposed, such as i-line phase-shifting lithography, deep-UV lithography and electron beam lithography. We have proposed several types of chemical amplification resist systems for future lithography. These are based on the change in dissolution rate by acid catalyzed reaction for aqueous development: dissolution inhibitor to dissolution promoter...